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Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP9467GM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP9467GM fiche technique
Advanced Power
Electronics Corp.
AP9467GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
Description
D
D
D
D
SO-8
G
SS
S
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
40V
10mΩ
12A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient3
Rating
40
± 20
12
10
40
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
50
Unit
/W
Data and specifications subject to change without notice
200810071-1/4

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