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Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP9467AGMT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP9467AGMT-HF fiche technique
Advanced Power
Electronics Corp.
AP9467AGMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
Low On-resistance
Halogen Free & RoHS Compliant Product
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
BVDSS
RDS(ON)
ID
40V
11.5mΩ
38A
D
D
D
D
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
PD@TC=25
PD@TA=25
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
38
15.8
12.6
150
29.7
5
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
4.2
25
Units
V
V
A
A
A
A
W
W
Units
/W
/W
Data & specifications subject to change without notice
1
200907241

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