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Numéro de référence | AP9466GJ | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP9466GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Single Drive Requirement
▼ Fast Switching Characteristics
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9466GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
40V
13.5mΩ
40A
GD S
TO-252(H)
G
D
S
TO-251(J)
Rating
40
+ 20
40
25
150
36.7
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Value
3.4
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200806182
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Pages | Pages 6 | ||
Télécharger | [ AP9466GJ ] |
No | Description détaillée | Fabricant |
AP9466GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9466GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9466GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9466GS | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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