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Numéro de référence | AP9466GS | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP9466GS
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Single Drive Requirement
▼ Fast Switching Characteristics
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
13.5mΩ
40A
G D S TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
40
± 20
40
25
150
36.7
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
3.4
62
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200727071-1/4
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Pages | Pages 5 | ||
Télécharger | [ AP9466GS ] |
No | Description détaillée | Fabricant |
AP9466GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9466GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9466GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9466GS | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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