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AP9960GH Datasheet دیتاشیت PDF دانلود

دیتاشیت - Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

شماره قطعه AP9960GH
شرح مفصل N-CHANNEL ENHANCEMENT MODE POWER MOSFET
تولید کننده Advanced Power Electronics 
آرم Advanced Power Electronics 


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AP9960GH شرح
Advanced Power
Electronics Corp.
AP9960GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9960GJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
40V
16mΩ
42A
GD
S
TO-252(H)
GD
S
Rating
40
±20
42
26
195
45
0.36
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
/W
/W
Data and specifications subject to change without notice
201007042

قانون اساسیصفحه 4
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