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AP9962AGH Datasheet دیتاشیت PDF دانلود

دیتاشیت - Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

شماره قطعه AP9962AGH
شرح مفصل N-CHANNEL ENHANCEMENT MODE POWER MOSFET
تولید کننده Advanced Power Electronics 
آرم Advanced Power Electronics 


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AP9962AGH شرح
Advanced Power
Electronics Corp.
AP9962AGH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
G
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maixmum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
40
±20
32
20
120
27.8
0.22
-55 to 150
-55 to 150
Value
4.5
110
Units
V
V
A
A
A
W
W/
Unit
/W
/W
Data and specifications subject to change without notice
1
200810282

قانون اساسیصفحه 5
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