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AP9965GEJ Datasheet دیتاشیت PDF دانلود

دیتاشیت - Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

شماره قطعه AP9965GEJ
شرح مفصل N-CHANNEL ENHANCEMENT MODE POWER MOSFET
تولید کننده Advanced Power Electronics 
آرم Advanced Power Electronics 


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AP9965GEJ شرح
Advanced Power
Electronics Corp.
AP9965GEH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9965GEJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
40V
28mΩ
27A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
40
+16
27
17
80
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.0
62.5
110
Units
/W
/W
/W
1
200903094
Downloaded from Elcodis.com electronic components distributor

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