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AP9971AGS-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP9971AGS-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP9971AGS-HF fiche technique
Advanced Power
Electronics Corp.
AP9971AGS-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
BVDSS
RDS(ON)
ID
60V
36mΩ
22A
G D S TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+20
22
14
80
34.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
3.6
40
Units
/W
/W
1
201311112

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