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Número de pieza | AP05N50H-3 | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP05N50H-3 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP05N50H-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
100% Avalanche Tested
Fast Switching Speed
RoHS-compliant
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
The AP05N50H-3 provides high blocking voltage to overcome
voltage surge and sag in the toughest power systems with the
best combination of fast switching and ruggedized design.
The TO-252 package is widely used in commercial and industrial
surface-mount applications.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
BV DSS
RDS(ON)
ID
500V
1.4Ω
5.0A
GDS
TO-252(H)
Rating
500
±20
5.0
2.8
18
73.5
0.59
45
3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-a
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.7
110
Unit
°C/W
°C/W
Ordering Information
AP05N50H-3TR RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel)
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200801251-3 1/5
1 page Advanced Power
Electronics Corp.
Package Dimensions: TO-252
AP05N50H-3
D
D1
E2
E3
E1
B1 F1
ee
F
SYMBOLS
A2
A3
B1
D
D1
E3
F
F1
E1
E2
e
C
Millimeters
MIN NOM MAX
1.80 2.30 2.80
0.40 0.50 0.60
0.40 0.70 1.00
6.00 6.50 7.00
4.80 5.35 5.90
3.50 4.00 4.50
2.20 2.63 3.05
0.50 0.85 1.20
5.10 5.70 6.30
0.50 1.10 1.80
-- 2.30 --
0.35 0.50 0.65
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
A2 R : 0.127~0.381
A3 (0.1mm
C
Marking Information: TO-252
05N50H
YWWSSS
Product: AP05N50H
Package code
H = RoHS-compliant TO-252
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AP05N50H-3.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP05N50H-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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