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IPG20N04S4-09 fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPG20N04S4-09
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPG20N04S4-09 fiche technique
IPG20N04S4-09
OptiMOS-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R
4)
DS(on),max
ID
40 V
8.6 mW
20 A
PG-TDSON-8-4
Type
IPG20N04S4-09
Package
Marking
PG-TDSON-8-4 4N0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
20
80
145
15
±20
54
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-08

PagesPages 9
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