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Número de pieza | IPG20N04S4-12 | |
Descripción | Power Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPG20N04S4-12 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! IPG20N04S4-12
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R
4)
DS(on),max
ID
40 V
12.2 mW
20 A
PG-TDSON-8-4
Type
IPG20N04S4-12
Package
Marking
PG-TDSON-8-4 4N0412
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
20
80
80
15
±20
41
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-05
1 page 5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
80
10 V
7V
60
IPG20N04S4-12
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
50
5V
5.5 V
6V
6.5 V
7V
6.5 V
40
40 30
6V
20 5.5V 20
5V
10 V
0 10
02468
0 20 40 60 80
V DS [V]
I D [A]
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 17 A; V GS = 10 V
80 20
175 °C
25 °C
-55 °C
18
60
16
40 14
12
20
10
0
345678
V GS [V]
8
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-10-05
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPG20N04S4-12.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPG20N04S4-12 | Power Transistor | Infineon |
IPG20N04S4-12A | Power-Transistor | Infineon |
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