|
|
PDF IRFZ34S Data sheet ( Hoja de datos )
| Número de pieza | IRFZ34S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFZ34S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
60
VGS = 10 V
46
Qgs (nC)
11
Qgd (nC)
22
Configuration
Single
0.050
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
-
Lead (Pb)-free
IRFZ34SPbF
SiHFZ34S-E3
Note
a. See device orientation.
D2PAK (TO-263)
-
IRFZ34STRRPbFa
SiHFZ34STRPbFa
D2PAK (TO-263)
SiHFZ34STRL-GE3
IRFZ34STRLPbFa
SiHFZ34STLPbFa
I2PAK (TO-262)
-
IRFZ34LPbF
SiHFZ34L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
LIMIT
60
± 20
30
21
120
0.59
200
88
3.7
4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90368
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90368
S11-1045-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFZ34S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFZ34 | Power MOSFET ( Transistor ) |  Fairchild Semiconductor |
| IRFZ34 | (IRFZ30 / IRFZ34) N-Channel Power MOSFET |  Samsung Electronics |
| IRFZ34 | Power MOSFET ( Transistor ) |  International Rectifier |
| IRFZ34 | (IRFZ34 / IRFZ35) N-Channel Transistors | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |