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Numéro de référence | RHRP840 | ||
Description | 400V - 600V Hyperfast Diodes | ||
Fabricant | Harris | ||
Logo | |||
1 Page
SEMICONDUCTOR
RHRP840, RHRP850,
RHRP860
April 1995
8A, 400V - 600V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
RHRP840, RHRP850 and RHRP860 (TA49059) are hyper-
fast diodes with soft recovery characteristics (tRR < 30ns).
They have half the recovery time of ultrafast diodes and are
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRP840
TO-220AC
RHRP840
RHRP850
TO-220AC
RHRP850
RHRP860
TO-220AC
RHRP860
NOTE: When ordering, use the entire part number.
Package
CATHODE
(FLANGE)
Symbol
JEDEC TO-220AC
ANODE
CATHODE
K
A
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRP840
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = +150oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
400
400
400
8
16
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
75
20
-65 to +175
RHRP850
500
500
500
8
16
100
75
20
-65 to +175
RHRP860
600
600
600
8
UNITS
V
V
V
A
16 A
100 A
75
20
-65 to +175
W
mj
oC
Copyright © Harris Corporation 1995
7-54
File Number 3668.1
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Pages | Pages 4 | ||
Télécharger | [ RHRP840 ] |
No | Description détaillée | Fabricant |
RHRP840 | 8A/ 400V - 600V Hyperfast Diodes | Fairchild Semiconductor |
RHRP840 | 8A/ 400V - 600V Hyperfast Diodes | Intersil Corporation |
RHRP840 | 400V - 600V Hyperfast Diodes | Harris |
RHRP840CC | 8A/ 400V - 600V Hyperfast Dual Diodes | Intersil Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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