|
|
Numéro de référence | AP95T08GP | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP95T08GP
Preliminary
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial power applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
D
S
80V
7mΩ
80A
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
80
±20
80
70
320
300
2
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
0.5
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200606071pre-1/4
|
|||
Pages | Pages 4 | ||
Télécharger | [ AP95T08GP ] |
No | Description détaillée | Fabricant |
AP95T08GP | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |