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Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP95N25W
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP95N25W fiche technique
Advanced Power
Electronics Corp.
AP95N25W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
High Speed Switching
G
D
S
Description
AP95N25 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
BVDSS
RDS(ON)
ID
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
250V
55mΩ
50A
TO-3P
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
IDM
IDR
IDR(PULSE)
PD@TC=25
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current1
Total Power Dissipation
Linear Derating Factor
Avalanche Current3
Storage Temperature Range
Operating Junction Temperature Range
Rating
250
±30
50
200
50
200
150
1.2
30
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.833
40
Data and specifications subject to change without notice
Units
V
V
A
A
A
A
W
W/
A
Units
/W
/W
200329072-1/4

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