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PDF AP05N50I-HF Data sheet ( Hoja de datos )
| Número de pieza | AP05N50I-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
AP05N50I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
500V
1.4Ω
G ID 5.0A
S
Description
AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
500
+20
5.0
2.8
18
31.3
0.25
4.5
3
-55 to 150
-55 to 150
Value
4.0
65
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Unit
℃/W
℃/W
1
201009233
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP05N50I-HF.PDF ] | |
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