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Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence IRF830I-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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IRF830I-HF fiche technique
Advanced Power
Electronics Corp.
Ease of Paralleling
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
IRF830I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
500V
RDS(ON)
1.5
G ID 4.5A
S
Description
APEC MOSFET provide the power designer with the best combination of
fast switching , lower on-resistance and reasonable cost.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+20
4.5
2.8
18
36.7
101
4.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.4
62
Unit
/W
/W
1
200907281

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