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AP10N70P-A fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP10N70P-A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP10N70P-A fiche technique
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
AP10N70R/P-A
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
650V
RDS(ON)
0.62Ω
G ID 10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
G
D
S
The TO-220 and TO-262 package is widely preferred for commercial-
industrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
DS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+30
10
6.8
40
174
1.39
50
10
-55 to 150
-55 to 150
TO-262(R)
TO-220(P)
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.72
62
Unit
/W
/W
Data & specifications subject to change without notice
1
200811035

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AP10N70P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET A-POWER
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AP10N70P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
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