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AP02N60P-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP02N60P-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP02N60P-HF fiche technique
Advanced Power
Electronics Corp.
AP02N60P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristics
Simple Drive Requirement
Halogen Free & RoHS Compliant
G
D BVDSS
RDS(ON)
ID
S
600V
8Ω
2A
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC, DC-AC
converters for telecom, industrial and consumer environment.
G
DS
TO-220
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
2
1.26
6
39
0.31
130
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.2
62
Units
/W
/W
1
201211203

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