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AP02N70EJ-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP02N70EJ-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP02N70EJ-HF fiche technique
Advanced Power
Electronics Corp.
100% Avalanche Test
ESD Improved Capability
Simple Drive Requirement
RoHS Compliant
AP02N70EJ-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
G RDS(ON)
700V
7Ω
ID 1.6A
S
Description
AP02N70 from APEC provide the designer with the best combination of
fast switching , low on-resistance and cost-effectiveness .
The TO-251 package is widely preferred for commercial-industrial
through hole applications and suited for AC/DC converters.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
±20
1.6
1
6.4
45
13
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.8
110
Units
/W
/W
1
200804171

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