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AP02N60T-H-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP02N60T-H-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP02N60T-H-HF fiche technique
Advanced Power
Electronics Corp.
AP02N60T-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristics
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
BVDSS
RDS(ON)
ID
700V
9
0.3A
S
D
G
TO-92
Top View
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TL=25
IDM
PD@TL=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+30
0.3
1.2
2
25
-55 to 150
-55 to 150
Units
V
V
A
A
W
mJ
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rthj-l
Maximum Thermal Resistance, Junction-lead
Data & specifications subject to change without notice
Value
150
60
Units
/W
/W
1
200911041

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