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PDF AP4439GH-HF Data sheet ( Hoja de datos )

Número de pieza AP4439GH-HF
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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Advanced Power
Electronics Corp.
AP4439GH-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
10mΩ
-58A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
PD@TC=25
PD@TA=25
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
+25
-58
-37
-200
50
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
2.5
62.5
Units
/W
/W
1
201012171

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