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PDF AP4407GP-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4407GP-HF | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4407GS/P-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D BVDSS
-30V
RDS(ON)
14mΩ
G ID -50A
S
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole
version (AP4407GP) are available for low-profile applications.
GDS
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
-30
+25
-50
-32
180
54
0.4
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.3
40
62
Unit
℃/W
℃/W
℃/W
1
201305203
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP4407GP-HF.PDF ] | |
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