DataSheetWiki


FM28V102A fiches techniques PDF

Cypress Semiconductor - 1-Mbit (64 K x 16) F-RAM Memory

Numéro de référence FM28V102A
Description 1-Mbit (64 K x 16) F-RAM Memory
Fabricant Cypress Semiconductor 
Logo Cypress Semiconductor 





1 Page

No Preview Available !





FM28V102A fiche technique
FM28V102A
1-Mbit (64 K × 16) F-RAM Memory
2-Mbit (128 K × 16) F-RAM Memory
Features
1-Mbit ferroelectric random access memory (F-RAM) logically
organized as 64 K × 16
Configurable as 128 K × 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention (see the Data Retention and
Endurance table)
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 64 K × 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 A (typ)
Sleep mode current 3 A (typ)
Logic Block Diagram
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 C to +85 C
44-pin thin small outline package (TSOP) Type II
Restriction of hazardous substances (RoHS) compliant
Functional Overview
The FM28V102A is a 64 K × 16 nonvolatile memory that reads
and writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM28V102A operation is similar to that of other RAM
devices and therefore, it can be used as a drop-in replacement
for a standard SRAM in a system. Read cycles may be triggered
by CE or simply by changing the address and write cycles may
be triggered by CE or WE. The F-RAM memory is nonvolatile
due to its unique ferroelectric memory process. These features
make the FM28V102A ideal for nonvolatile memory applications
requiring frequent or rapid writes.
The device is available in a 400-mil 44-pin TSOP-II
surface mount package. Device specifications are guaranteed
over the industrial temperature range –40 °C to +85 °C.
A15-0
CE
UB, LB
WE
OE
ZZ
A15-2
A 1-0
Control
Logic
64 K x 16
F-RAM Array
...
Column Decoder
I/O Latch & Bus Driver
DQ15-0
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-91080 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised June 30, 2014

PagesPages 20
Télécharger [ FM28V102A ]


Fiche technique recommandé

No Description détaillée Fabricant
FM28V102A 1-Mbit (64 K x 16) F-RAM Memory Cypress Semiconductor
Cypress Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche