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HGSemi - Silicon NPN POWER TRANSISTOR

Numéro de référence C2312
Description Silicon NPN POWER TRANSISTOR
Fabricant HGSemi 
Logo HGSemi 





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C2312 fiche technique
HG
Semiconductors
HG RF POWER TRANSISTOR
2SC2312
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION
Designed for RF power amplifier on HF band mobile
radio applications.
FEATURES
Specified 12V, 27MHz Characteristics
PO = 18.5W
GP = 10.5 dB min. at 18.5 W/27 MHz
Emitter ballasted construction
DIMENSIONS
–T–
SEATING
PLANE
C
TS
Q
H
U
Z
B
4
1 23
F
A
K
L
V
R
STYLE 1:
PIN 1. BASE
G
J
2. COLLECTOR
D
3. EMITTER
4. COLLECTOR
N
UNIT
mm
inc hes
A
15.75
14.48
0.620
0.570
B
10.28
9.66
0.405
0.380
C
4.82
4.07
0.19
0.16
D
0.88
0.64
0.035
0.025
F
3.73
3.61
0.147
0.142
G
2.66
2.42
0.105
0.095
H
3.93
2.8
0.155
0.110
J
0.64
0.46
0.025
0.018
K
14.27
12.70
0.562
0.500
L
1.52
1.15
0.060
0.045
N
5.33
4.83
0.210
0.190
Q
3.04
2.54
0.12
0.10
R
2.79
2.04
0.11
0.08
S
1.39
1.15
0.055
0.045
T
6.47
5.97
0.255
0.235
U
1.27
0.00
0.05
0.00
V
--
1.15
--
0.045
Z
2.04
--
0.08
--
MAXIMUM RATINGS
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCES
VCEO
IC
VEBO
PDISS
TJ
TSTG
RATINGS
60
60
20
6
5
25
-65 to 175
-65 to 175
UNITS
V
V
V
A
V
W
°C
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Power Gain
Collector Efficiency
SYMBOL TEST CONDITIONS
V(BR)CEO IC=10mA,IB=0
V(BR)CES IC=1mA,VEB=0
V(BR)EBO IE=5mA,IC=0
ICBO VCB = 30V, IE = 0
hFE VCE=12V,IC=100mA
GP VCC=12V,POUT=18.5W,
ηC f=27MHZ ,PIN=1.5W
MIN.
20
60
5
20
10.5
60
TYP.
-
-
-
50
-
70
MAX. UNITS
-V
-V
-V
500 uA
180
- dB
-%
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998

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