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What is MX25L12855E?

This electronic component, produced by the manufacturer "MACRONIX", performs the same function as "FLASH MEMORY".


MX25L12855E Datasheet PDF - MACRONIX

Part Number MX25L12855E
Description FLASH MEMORY
Manufacturers MACRONIX 
Logo MACRONIX Logo 


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MX25L6455E
MX25L12855E
MX25L6455E/MX25L12855E
HIGH PERFORMANCE
SERIAL FLASH SPECIFICATION
P/N: PM1467
REV. 1.1, JUL. 17, 2009
1

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MX25L12855E equivalent
MX25L6455E
MX25L12855E
64/128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/
O mode) structure
128Mb: 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (two I/O mode) structure or 33,554,432 x 4 bits (four
I/O mode) structure
• 4096 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 512 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 256 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read (Normal Serial Mode)
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 70MHz with 4 dummy cycles
- 4 I/O: 70MHz with 6 dummy cycles
- Fast read (Double Transfer Rate Mode)
- 1 I/O: 50MHz with 6 dummy cycles
- 2 I/O: 50MHz with 6 dummy cycles
- 4 I/O: 50MHz with 8 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 9us (typical)
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip
for 64Mb, 80s(typ.) /chip for 128Mb
• Low Power Consumption
- Low active read current: 45mA(max.) at 104MHz, 40mA(max.) at 66MHz and 30mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 100uA (max.)
- Deep power down current: 128Mb is 40uA (max.), 64Mb is 30uA (max.)
• Typical 100,000 erase/program cycles
P/N: PM1467
REV. 1.1, JUL. 17, 2009
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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MX25L12855E electronic component.


Information Total 69 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
MX25L12855EThe function is 128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY. Macronix InternationalMacronix International
MX25L12855EThe function is FLASH MEMORY. MACRONIXMACRONIX

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