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PDF MT29F1G08ABADAH4 Data sheet ( Hoja de datos )
| Número de pieza | MT29F1G08ABADAH4 | |
| Descripción | NAND Flash Memory | |
| Fabricantes | Micron Technology | |
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Micron Confidential and Proprietary
Preliminary‡
1Gb x8, x16: NAND Flash Memory
Features
NAND Flash Memory
MT29F1G08ABADAWP, MT29F1G08ABBDAH4,
MT29F1G08ABBDAHC, MT29F1G16ABBDAH4,
MT29F1G16ABBDAHC, MT29F1G08ABADAH4
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 1Gb: 1024 blocks
• Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs3
– Program page: 200µs (TYP, 3.3V and 1.8V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode5
– Read page cache mode5
– One-time programmable (OTP) mode
– Read unique ID
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Internal data move operations supported within the
device from which data is read
• Ready/busy# (R/B#) signal provides a hardware
method for detecting operation completion
• WP# signal: write protect entire device
• First block (block address 00h) is valid when ship-
ped from factory with ECC. For minimum required
ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
cles are less than 1000
• RESET (FFh) required as first command after power-
on
• Alternate method of device initialization (Nand_In-
it) after power up4 (contact factory)
• Quality and reliability
– Data retention: 10 years
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Extended (ET): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA
Notes:
1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
3. See Electrical Specifications for tR_ECC and
tPROG_ECC specifications.
4. Available only in the 1.8V VFBGA package.
5. Supported only with ECC disabled.
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
1 page  
Micron Confidential and Proprietary
Preliminary
1Gb x8, x16: NAND Flash Memory
Features
List of Tables
Table 1: Asynchronous Signal Definitions ........................................................................................................ 8
Table 2: Array Addressing (x8) ........................................................................................................................ 16
Table 3: Array Addressing (x16) ...................................................................................................................... 17
Table 4: Asynchronous Interface Mode Selection ........................................................................................... 18
Table 5: Command Set .................................................................................................................................. 29
Table 6: READ ID Parameters for Address 00h ................................................................................................ 33
Table 7: READ ID Parameters for Address 20h ................................................................................................ 34
Table 8: Parameter Page Data Structure ......................................................................................................... 36
Table 9: Feature Address Definitions .............................................................................................................. 40
Table 10: Feature Address 90h – Array Operation Mode .................................................................................. 41
Table 11: Feature Addresses 01h: Timing Mode .............................................................................................. 43
Table 12: Feature Addresses 80h: Programmable I/O Drive Strength ............................................................... 44
Table 13: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ..................................................... 44
Table 14: Status Register Definition ............................................................................................................... 45
Table 15: Error Management Details .............................................................................................................. 71
Table 16: Absolute Maximum Ratings ............................................................................................................ 75
Table 17: Recommended Operating Conditions ............................................................................................. 75
Table 18: Valid Blocks .................................................................................................................................... 75
Table 19: Capacitance ................................................................................................................................... 76
Table 20: Test Conditions .............................................................................................................................. 76
Table 21: AC Characteristics: Command, Data, and Address Input (3.3V) ......................................................... 77
Table 22: AC Characteristics: Command, Data, and Address Input (1.8V) ......................................................... 77
Table 23: AC Characteristics: Normal Operation (3.3V) ................................................................................... 78
Table 24: AC Characteristics: Normal Operation (1.8V) ................................................................................... 78
Table 25: DC Characteristics and Operating Conditions (3.3V) ........................................................................ 80
Table 26: DC Characteristics and Operating Conditions (1.8V) ........................................................................ 81
Table 27: ProgramErase Characteristics ......................................................................................................... 82
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
5 Page 
Micron Confidential and Proprietary
Preliminary
1Gb x8, x16: NAND Flash Memory
Signal Assignments
Figure 4: 63-Ball VFBGA, x16 (Balls Down, Top View)
1 2 3 4 5 6 7 8 9 10
A NC NC
NC NC
B NC
NC NC
C WP# ALE Vss CE# WE# R/B#
D Vcc RE# CLE NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC Vss NC
G
DNU Vcc
NC I/O13 I/O15 DNU
H I/O8 I/O0 I/O10 I/O12 I/O14 Vcc
J I/O9 I/O1 I/O11 Vcc I/O5 I/O7
K Vss I/O2 I/O3 I/O4 I/O6 Vss
L NC NC
NC NC
M NC NC
NC NC
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
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