DataSheetWiki


R1RW0404DGE-2PR fiches techniques PDF

Renesas - 4M High Speed SRAM

Numéro de référence R1RW0404DGE-2PR
Description 4M High Speed SRAM
Fabricant Renesas 
Logo Renesas 





1 Page

No Preview Available !





R1RW0404DGE-2PR fiche technique
R1RW0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0115-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed and high density
memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin
SOJ for high density surface mounting.
Features
Single supply: 3.3 V ± 0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 100 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11

PagesPages 13
Télécharger [ R1RW0404DGE-2PR ]


Fiche technique recommandé

No Description détaillée Fabricant
R1RW0404DGE-2PR 4M High Speed SRAM Renesas
Renesas

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche