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Numéro de référence | R1RW0404DGE-2PR | ||
Description | 4M High Speed SRAM | ||
Fabricant | Renesas | ||
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1 Page
R1RW0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0115-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed and high density
memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin
SOJ for high density surface mounting.
Features
• Single supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 100 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
• Data retention current: 0.4 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11
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Pages | Pages 13 | ||
Télécharger | [ R1RW0404DGE-2PR ] |
No | Description détaillée | Fabricant |
R1RW0404DGE-2PR | 4M High Speed SRAM | Renesas |
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