DataSheetWiki


R1RP0416D fiches techniques PDF

Renesas - 4M High Speed SRAM

Numéro de référence R1RP0416D
Description 4M High Speed SRAM
Fabricant Renesas 
Logo Renesas 





1 Page

No Preview Available !





R1RP0416D fiche technique
R1RP0416D Series
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0108-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 V supply: 5.0 V ± 10%
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 160 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
Data retention current: 0.5 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center VCC and VSS type pin out
Ordering Information
Type No.
R1RP0416DGE-2PR
R1RP0416DGE-2LR
R1RP0416DSB-2PR
R1RP0416DSB-2LR
Access time
12 ns
12 ns
12 ns
12 ns
Package
400-mil 44-pin plastic SOJ (44P0K)
400-mil 44-pin plastic TSOPII (44P3W-H)
Rev.1.00, Mar.12.2004, page 1 of 13

PagesPages 15
Télécharger [ R1RP0416D ]


Fiche technique recommandé

No Description détaillée Fabricant
R1RP0416D 4M High Speed SRAM Renesas
Renesas
R1RP0416DGE-2LR 4M High Speed SRAM Renesas
Renesas
R1RP0416DGE-2PR 4M High Speed SRAM Renesas
Renesas
R1RP0416DI 4M High Speed SRAM Renesas
Renesas

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche