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PDF R1RP0404DGE-2PR Data sheet ( Hoja de datos )
| Número de pieza | R1RP0404DGE-2PR | |
| Descripción | 4M High Speed SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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R1RP0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0116-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed
access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high
density surface mounting.
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
• Data retention current: 0.5 mA (max) (L-version)
• Data retention voltage: 2.0 V (min) (L-version)
• Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11
1 page  
R1RP0404D Series
DC Characteristics
(Ta = 0 to +70°C, VCC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Input leakage current
Output leakage current
Operation power supply current
Symbol
IILII
IILOI
ICC
Min
Standby power supply current
I
SB
ISB1
Max
2
2
130
40
5
*1
1.0*1
Output voltage
VOL
0.4
VOH 2.4
Note: 1. This characteristics is guaranteed only for L-version.
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
VIN = VSS to VCC
VIN = VSS to VCC
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = V /V
IH IL
Min cycle, CS# = V ,
IH
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS# ≥ VCC − 0.2 V,
(1)
0
V
≤
V
IN
≤
0.2
V
or
(2) VCC ≥ VIN ≥ VCC − 0.2 V
IOL = 8 mA
IOH = −4 mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Input capacitance*1
C
IN
6
Input/output capacitance*1
C
I/O
8
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions
V =0V
IN
V =0V
I/O
Rev.1.00, Mar.12.2004, page 5 of 11
5 Page 
R1RP0404D Series
Low VCC Data Retention Characteristics
(Ta = 0 to +70°C)
This characteristics is guaranteed only for L-version.
Parameter
V for data retention
CC
Symbol
V
DR
Min
2.0
Data retention current
ICCDR
Chip deselect to data
retention time
Operation recovery time
tCDR
tR
0
5
Max
500
Unit
V
µA
ns
ms
Test conditions
V
CC
≥
CS#
≥
V
CC
−
0.2
V
(1) 0 V ≤ VIN ≤ 0.2 V or
(2) VCC ≥ VIN ≥ VCC − 0.2 V
VCC = 3 V, VCC ≥ CS# ≥ VCC − 0.2 V
(1)
0
V
≤
V
IN
≤
0.2
V
or
(2) VCC ≥ VIN ≥ VCC − 0.2 V
See retention waveform
Low VCC Data Retention Timing Waveform
VCC
4.5 V
t CDR
Data retention mode
tR
2.2 V
VDR
CS#
0V
VCC ≥ CS# ≥ VCC − 0.2 V
Rev.1.00, Mar.12.2004, page 11 of 11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet R1RP0404DGE-2PR.PDF ] | |
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