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R1RW0408D fiches techniques PDF

Renesas - 4M High Speed SRAM

Numéro de référence R1RW0408D
Description 4M High Speed SRAM
Fabricant Renesas 
Logo Renesas 





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R1RW0408D fiche technique
R1RW0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0111-0200
Rev. 2.00
Dec.1.2008
Description
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The
R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
Single supply: 3.3 V ± 0.3 V
Access time: 10 ns /12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 115mA/ 100mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 12

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