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PDF AS6C8008-55ZIN Data sheet ( Hoja de datos )
| Número de pieza | AS6C8008-55ZIN | |
| Descripción | 1024K X 8 BIT SUPER LOW POWER CMOS SRAM | |
| Fabricantes | Alliance Semiconductor | |
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JaAnNuUaAryRY20200708
AS6C8008
1024K X 8 BIT SUPER 5L1O2WKPXO8WBERITCLMOOWS SPROAWMER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 6µA (TYP.) LL-version
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
AS6C8008(I)
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
GENERAL DESCRIPTION
The AS6C8008 is a 8,388,608-bit low power
CMOS static random access memory organized as
1,048,576 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C8008 is well designed for very low
power system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The AS6C8008 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
Speed
55ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
6µA(LL)
30mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A19
DECODER
1024Kx8
MEMORY RARAY
DQ0-DQ7
CE#
CE2
WE#
OE#
I/O DATA
CIRCUIT
CONTROL
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A19
Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
CE#, CE2 Chip Enable Inputs
WE#
Write Enable Input
OE#
Output Enable Input
VCC Power Supply
VSS Ground
NC No Connection
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 1 of 11
1 page  
JaAnNuUaAryRY20200708
AS6C8008
1024K X 8 BIT SUPER 5LO12WKPOXW8EBR ICTMLOOS WSRAPMOWER CMOS SRAM
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
Address
Dout
tRC
Previous Data Valid
tAA
tOH
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
Address
CE#
CE2
tRC
tAA
tACE
OE#
Dout
High-Z
tOLZ
tCLZ
tOE
tOH
tOHZ
tCHZ
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low., CE2 = high.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 5 of 11
5 Page 
JaAnNuUaAryRY20200708
AS6C8008
1024K X 8 BIT LOW5P1O2WKERXC8MBOISTSLRAOMW POWER CMOS SRAM
®
Alliance Memory, Inc
511 Taylor Way,
San Carlos, CA 94070, USA
Phone: 650-610-6800
Fax: 650-620-9211
www.alliancememory.com
Copyright © Alliance Memory
All Rights Reserved
© Copyright 2007 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks ofAlliance.
All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to thisdocument and its
products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The datacontained herein represents
Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at anytime, without notice. If the product
described herein is under development, significant changes to these specifications are possible. The information inthis product data sheet is intended to be
general descriptive information for potential customers and users, and is not intended to operate as, or provide,any guarantee or warrantee to any user or
customer. Alliance does not assume any responsibility or liability arising out of the application or use of anyproduct described herein, and disclaims any
express or implied warranties related to the sale and/or use of Alliance products including liability orwarranties related to fitness for a particular purpose,
merchantability, or infringement of any intellectual property rights, except as express agreed to inAlliance's Terms and Conditions of Sale (which are available
from Alliance). All sales of Alliance products are made exclusively according to Alliance'sTerms and Conditions of Sale. The purchase of products from
Alliance does not convey a license under any patent rights, copyrights; mask works rights,trademarks, or any other intellectual property rights of Alliance or
third parties. Alliance does not authorize its products for use as critical components inlife-supporting systems where a malfunction or failure may reasonably be
expected to result in significant injury to the user, and the inclusion ofAlliance products in such life-supporting systems implies that the manufacturer assumes
all risk of such use and agrees to indemnify Alliance against allclaims arising from such use.
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AS6C8008-55ZIN.PDF ] | |
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