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AS6C8008-55BIN fiches techniques PDF

Alliance Semiconductor - 1024K X 8 BIT SUPER LOW POWER CMOS SRAM

Numéro de référence AS6C8008-55BIN
Description 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
Fabricant Alliance Semiconductor 
Logo Alliance Semiconductor 





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AS6C8008-55BIN fiche technique
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AS6C8008
1024K X 8 BIT SUPER 5L1O2WKPXO8WBERITCLMOOWS SPROAWMER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 6µA (TYP.) LL-version
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
AS6C8008(I)
Operating
Temperature
-40 ~ 85
Vcc Range
2.7 ~ 5.5V
GENERAL DESCRIPTION
The AS6C8008 is a 8,388,608-bit low power
CMOS static random access memory organized as
1,048,576 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C8008 is well designed for very low
power system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The AS6C8008 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
Speed
55ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
6µA(LL)
30mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A19
DECODER
1024Kx8
MEMORY RARAY
DQ0-DQ7
CE#
CE2
WE#
OE#
I/O DATA
CIRCUIT
CONTROL
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A19
Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
CE#, CE2 Chip Enable Inputs
WE#
Write Enable Input
OE#
Output Enable Input
VCC Power Supply
VSS Ground
NC No Connection
JANUARY/2008, V 1.0
Alliance Memory Inc.
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