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PDF AS6C8016A Data sheet ( Hoja de datos )
| Número de pieza | AS6C8016A | |
| Descripción | 512K x 16 SRAM | |
| Fabricantes | Alliance Semiconductor | |
| Logotipo |  |
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Revision History
AS6C8016A
Low Power, 512Kx16 SRAM
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision No
1.0
2.0
3.0
History
Initial Issue
tDW updated to 25ns
Update USA HQ moved - change of address
Date
August 2010
October 2012
September 2014
Remark
Preliminary
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
1 Rev. 3.0
Sep /2014
1 page  
AS6C8016A
Low Power, 512Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Symbol
Min
Supply voltage
Ground
VCC
VSS
2.7
0
Input high voltage
VIH 2.2
Input low voltage
VIL -0.23)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Typ
3.3
0
-
-
Max
3.6
0
VCC + 0.22)
0.6
Unit
V
V
V
V
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Symbol
Input capacitance
CIN
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
Output leakage current
ILI VIN=VSS to VCC
-1 -
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
-1
-
1 A
1 A
Operating power supply
ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL
- - 2 mA
Average operating
current
ICC1
Cycle time=1s, 100% duty, IIO=0mA,
CS1<0.2V, CS2>VCC-0.2V, LB<0.2V or/and UB<0.2V,
VIN<0.2V or VIN>VCC-0.2V
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
55ns
-
-
- 4 mA
- 35 mA
Output low voltage
Output high voltage
Standby Current (TTL)
Standby Current (CMOS)
VOL
VOH
ISB
ISB1
IOL = 2.1mA
IOH = -1.0mA
CS1 =VIH, CS2=VIL, Other inputs=VIH or VIL
CS1 >VCC-0.2V, CS2>VCC-0.2V (CS1 controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~VCC
(Typ. condition : VCC=3.3V @ 25oC)
(Max. condition : VCC=3.6V @ 85oC)
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
- - 0.4 V
2.4 - - V
- - 0.5 mA
LF - 2 1) 15 A
Alliance Memory Inc. reserves the right to change products or specification without notice.
5 Rev. 3.0
Sep /2014
5 Page 
AS6C8016A
Low Power, 512Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
Test Condition
Min Typ Max Unit
VCC for Data Retention
VDR
ISB1 Test Condition
(Chip Disabled)1)
1.5 - 3.6 V
Data Retention Current
IDR
VCC=1.5V, ISB1 Test Condition
(Chip Disabled)1)
-
-
4 A
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
tRDR
See data retention wave form
NOTES
1. See the ISB1 measurement condition of datasheet page 5.
0
tRC
-
-
-
ns
-
DATA RETENTION WAVE FORM
Vcc
2.7V
tSDR
Data Retention Mode
2.2V
VDR
CS1, LB / UB
GND
CS1 > Vcc-0.2V
tRDR
Vcc
2.7V
CS2
VDR
0.4V
GND
tSDR
Data Retention Mode
CS2 < 0.2V
tRDR
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
11 Rev. 3.0
Sep /2014
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AS6C8016A.PDF ] | |
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