PDF AS6nvLC256K16DCG-45XT Data sheet ( Hoja de datos )

Número de pieza	AS6nvLC256K16DCG-45XT
Descripción	512K x 8 / 256K x 16 nvSRAM
Fabricantes	Micross Components
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No Preview Available ! ADVANCE INFORMATION nvSRAM AS6nvLC512K8 AS6nvLC256K16 512K x 8 / 256K x 16 nvSRAM 3.3V High Speed SRAM with Non-Volatile Storage AVAILABLE AS MILITARY SPECIFICATIONS • Military Processing (MIL-STD-883C para 1.2.2) • Temperature Range -55C to 125C FEATURES • -55oC to 125oC Operation • True non-volatile SRAM (no batteries) • 20 ns, 25 ns, and 45 ns access times • Automatic STORE on power down with only a small capacitor • STORE to QuantumTrap® nonvolatile elements initiated by software, device pin, or AutoStore® on power down • RECALL to SRAM initiated by software or power up • Inﬁnite Read, Write, and Recall cycles • 200,000 STORE cycles to QuantumTrap • 20 year data retention • Single 3.3V +.3V/-3V operation • Ceramic Hermetic 44 Gullwing -Can order with X7R CAPS on package -Matches footprint of plastic 44 TSOP • MIL-STD-883 Processing FUNCTIONAL DESCRIPTION The AS6nvLC512K8 / AS6nvLC256K16 is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides inﬁnite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. LOGIC BLOCK DIAGRAM 1, 2, 3] $ $ $ $ $ $ $ $ $ $ $ '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 '4 5 2 : ' ( & 2 ' ( 5 , 1 3 8 7 % 8 ) ) ( 5 6 4XDWUXP7UDS ; 6725( 5(&$// 67$7,&5$0 $55$< ; &2/801,2 &2/801'(& $ $ $ $ $ $ $ $ 9&& 9&$3 32:(5 &21752/ 6725(5(&$// &21752/ 62)7:$5( '(7(&7 +6% $$ 2( :( &( %/( Notes 1. Address A0 - A18 for x8 conﬁguration and Address A0 - A17 for x16 conﬁguration. 2. Data DQ0 - DQ7 for x8 conﬁguration and Data DQ0 - DQ15 for x16 conﬁguration. 3. BHE and BLE are applicable for x16 conﬁguration only. AS6nvLC512K8 AS6nvLC256K16 Rev. 0.2 06/10 1 %+( Micross Components reserves the right to change products or speciﬁcations without notice. 1 page Mode Selection (continued) ADVANCE INFORMATION nvSRAM AS6nvLC512K8 AS6nvLC256K16 CE\ WE\ OE\,BHE\,BLE\13 A15ͲA07 Mode I/O Power L H L 0x4E38 ReadSRAM OutputData Active8 0xB1C7 ReadSRAM OutputData 0x83E0 ReadSRAM OutputData 0x7C1F ReadSRAM OutputData 0x703F ReadSRAM OutputData 0x4B46 AutoStoreEnable OutputData L H L 0x4E38 ReadSRAM OutputData ActiveICC28 0xB1C7 ReadSRAM OutputData 0x83E0 ReadSRAM OutputData 0x7C1F ReadSRAM OutputData 0x703F ReadSRAM OutputData 0x8FC0 NonvolatileStore OutputHighZ L H L 0x4E38 ReadSRAM OutputData Active8 0xB1C7 ReadSRAM OutputData 0x83E0 ReadSRAM OutputData 0x7C1F ReadSRAM OutputData 0x703F ReadSRAM OutputData 0x4C63 Nonvolatile OutputHighZ Recall Preventing AutoStore The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x8B45 AutoStore Disable The AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE controlled read operations must be performed: 1. Read address 0x4E38 Valid READ 2. Read address 0xB1C7 Valid READ 3. Read address 0x83E0 Valid READ 4. Read address 0x7C1F Valid READ 5. Read address 0x703F Valid READ 6. Read address 0x4B46 AutoStore Enable If the AutoStore function is disabled or re-enabled, a manual STORE operation (hardware or software) must be issued to save the AutoStore state through subsequent power down cycles. The part comes from the factory with AutoStore enabled. Data Protection The AS6nvLC512K8 / AS6nvLC256K16 protects data from corruption during low voltage conditions by inhibiting all externally initiatedSTORE and write operations. The low voltage condition is detected when VCC < VSWITCH. If the AS6nvLC512K8 / AS6nvLC256K16 is in a write mode (both CE and WE are LOW) at power up, after a RECALL or STORE, the write is inhibited until the SRAM is enabled after tLZHSB (HSB to output active). This protects against inadvertent writes during power up or brown out conditions. AS6nvLC512K8 AS6nvLC256K16 Rev. 0.2 06/10 Micross Components reserves the right to change products or speciﬁcations without notice. 5 5 Page Address CE BHE, BLE WE Data Input Data Output Address CE BHE, BLE WE Data Input Data Output ADVANCE INFORMATION nvSRAM AS6nvLC512K8 AS6nvLC256K16 SRAM Write Cycle #2: CE\ Controlled3, 16, 17, 18 tWC Address Valid tSA tSCE tHA tBW tPWE tSD tHD Input Data Valid High Impedance SRAM Write Cycle #3: BHE\ and BLE\ Controlled3, 16, 17, 18 tWC Address Valid tSCE tSA tBW tHA tAW tPWE tSD tHD Input Data Valid High Impedance AS6nvLC512K8 AS6nvLC256K16 Rev. 0.2 06/10 11 Micross Components reserves the right to change products or speciﬁcations without notice. 11 Page

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