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PDF HY3506W Data sheet ( Hoja de datos )
| Número de pieza | HY3506W | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | HOOYI | |
| Logotipo |  |
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HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 60V/190A
RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
G
D
S
TO-220
G
D
S
D
TO-247
Applications
• Switching application
• Power Management for Inverter Systems.
Ordering and Marking Information
G
S
N-Channel MOSFET
P
HY3506
YYÿ XXXJWW G
W
HY3506
YYÿ XXXJWW G
Package Code
P : TO220-3L
W : TO247-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com
1 page  
HY3506P/W
Typical Operating Characteristics (Cont.)
Output Characteristics
300
270
V = 6,7,8,9,10V
GS
240
210
5.5V
180
150
120
90 5V
60
30 4.5V
0
012345
VDS - Drain - Source Voltage (V)
Gate-Source On Resistance
18
I =95A
DS
15
12
9
6
3
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
9
8
7
6
5
VGS =10V
4
3
2
1
0
0 20 40 60 80 100 120
ID - Drain Current (A)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
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5 Page 
HY3506P/W
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax)
3 °C/second max.
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
6 °C/second max.
3°C/second max.
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<2.5 mm
235 °C
≥2.5 mm
220 °C
Volume mm3
≥350
220 °C
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<1.6 mm
260 °C
1.6 mm – 2.5 mm
260 °C
≥2.5 mm
250 °C
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HY3506W.PDF ] | |
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