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ROHM Semiconductor - Super Fast Recovery Diode

Numéro de référence RFV15TJ6S
Description Super Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RFV15TJ6S fiche technique
Super Fast Recovery Diode
RFV15TJ6S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
lApplication
General rectification
For PFC
(CCM : Continuous Current Mode)
RFV15
TJ6S 1
2
lFeatures
1) Hyper fast recovery / Hard recovery type
2) Ultra low switching loss
1.4±0.2
2.6±0.1
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO-220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
600 V
Reverse voltage
VR Direct reverse voltage
600 V
Average current
Io 60Hz half sin wave , resistive load Tc=30°C
15
A
Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
150
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=15A
Tj=25°C 1.6
Tj=125°C -
Reverse current
IR
VR=600V
Tj=25°C
Tj=125°C
-
-
Reverse recovery time
IF=0.5A, IR=1A, Irr=0.25×IR -
trr
IF=15A, VR=400V, dIF/dt=-200A/ms -
Reverse recovery current
Reverse recovery charges
Forward recovery time
Forward recovery voltage
IRp
Qrr
IF=15A, VR=400V
dIF/dt=-200A/ms
Tj=125°C
-
-
tfr IF=15A, dIF/dt=200A/ms, -
VFp VFR=1.1xVFmax -
Thermal resistance
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
-
-
Typ.
2.3
1.55
0.03
10
20
30
6.5
200
150
5.5
-
-
Max. Unit
2.8 V
-V
10 mA
200 mA
30 ns
50 ns
-A
- nC
- ns
-V
6.5 °C/W
2.8 °C/W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A

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