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RB160MM-50 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB160MM-50
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB160MM-50 fiche technique
Schottky Barrier Diode
RB160MM-50
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±0.1
    0.05
lLand Size Figure (Unit : mm)
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
PMDU
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf11..5555±00.0.055
lStructure Cathode
Anode
0.25±0.05
1.81±0.1
4.0±0.1
fφ11.0.0±0.01.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty0.5
50 V
Reverse Voltage
Average Forward Rectified Current
VR
Io
Direct Reverse Voltage
Glass epoxi mounted,
60Hz half sin Wave resistive load
Non-repetitive Forward Current Surge Peak IFSM 60Hz half sin wave ,Non-repetitive at Ta=25°C
40
1
30
V
A
A
Operating Junction Temperature
Tj
-
150 °C
Storage Temperature
Tstg
- -40 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=1.0A
VR=40V
Min. Typ. Max. Unit
- 0.46 0.51 V
- 4.0 30 mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.09 - Rev.A

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