DataSheetWiki


AS5LC512K16 fiches techniques PDF

Micross Components - 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Numéro de référence AS5LC512K16
Description 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Fabricant Micross Components 
Logo Micross Components 





1 Page

No Preview Available !





AS5LC512K16 fiche technique
512K x 16 HIGH SPEED
ASYNCHRONOUS CMOS
STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 10, 15 & 20ns
• Available in Mil-Temp*, Enhanced & Industrial Ranges
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise
immunity
• Easy memory expansion with CE\ and OE\ operations
• CE\ power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Data control for upper and lower bytes
• Single power supply: VDD=3.3V ±0.5%
• Package: 44-pin TSOPII
•TSOPII in copper lead frame for superior thermal
performance
• RoHs compliant options available
*Consult factory for /XT product.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
PRELIMINARY SRAM
AS5LC512K16
PIN CONFIGURATIONS
44-pin TSOPII (DGC & DGCR)
A0 1
A1 2
A2 3
A3 4
A4 5
CE 6
I/O0 7
I/O1 8
I/O2 9
I/O3 10
VDD 11
GND 12
I/O4 13
I/O5 14
I/O6 15
I/O7 16
WE 17
A5 18
A6 19
A7 20
A8 21
A9 22
44 A17
43 A16
42 A15
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 VDD
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 A18
27 A14
26 A13
25 A12
24 A11
23 A10
A0ͲA18
I/OoͲI/O15
CE\
OE\
WE\
LB\
UB\
NC
VDD
GND
AddressInputs
DataInputs/Outputs
ChipEnableInput
OutputEnableInput
WriteEnableInput
LowerͲbyteControl(I/O0ͲI/O7)
UpperͲbyteControl(I/O8ͲI/O15)
NoConnection
Power
Ground
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE CONTROL
WE CIRCUIT
UB
LB
COLUMN I/O
For more products and information
please visit our web site at
www.micross.com
GENERAL DESCRIPTION
The Micross AS5LC512K16 is a high-speed, 8M-bit static RAM
organized as 512K words by 16 bits. It is fabricated using Mi-
cross’ high performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CE\ is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE\ and OE\. The active LOW
Write Enable (WE\) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB\) and Lower
Byte (LB\) access.
The AS5LC512K16 is packaged in a JEDEC standard 44-pin
TSOPII with copper lead frame for superior thermal perfor-
mance. RoHs compliant options are available.
AS5LC512K16
Rev. 0.1 09/11
Micross Components reserves the right to change products or specications without notice.
1

PagesPages 12
Télécharger [ AS5LC512K16 ]


Fiche technique recommandé

No Description détaillée Fabricant
AS5LC512K16 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Micross Components
Micross Components

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche