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PDF MT48H16M32LG Data sheet ( Hoja de datos )
| Número de pieza | MT48H16M32LG | |
| Descripción | Mobile LPSDR SDRAM | |
| Fabricantes | Micron Technology | |
| Logotipo |  |
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Features
Mobile LPSDR SDRAM
MT48H32M16LF – 8 Meg x 16 x 4 Banks
MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks
Features
• VDD/VDDQ = 1.7–1.95V
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, and continu-
ous
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control self refresh
rate
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive strength (DS)
• 64ms refresh period; 32ms for automotive tempera-
ture
Options
• VDD/VDDQ: 1.8V/1.8V
• Addressing
– Standard addressing option
– Reduced page size option1
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4
banks)
– 16 Meg x 32 (4 Meg x 32 x 4
banks)
• Plastic “green” packages
– 54-ball VFBGA (8mm x 8mm)2
– 90-ball VFBGA (8mm x 13mm)3
• Timing – cycle time
– 6ns at CL = 3
– 7.5ns at CL = 3
• Power
– Standard IDD2/IDD7
– Low-power IDD2/IDD71
• Operating temperature range
– Commercial (0˚C to +70˚C)
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Revision
Marking
H
LF
LG
32M16
16M32
B4
B5
-6
-75
None
L
None
IT
AT
:C
Notes:
1. Contact factory for availability.
2. Available only for x16 configuration.
3. Available only for x32 configuration.
Table 1: Configuration Addressing
Architecture
32 Meg x 16
Number of banks
4
Bank address balls
BA0, BA1
Row address balls
A[12:0]
Column address balls
A[9:0]
Note: 1. Contact factory for availability.
16 Meg x 32
4
BA0, BA1
A[12:0]
A[8:0]
16 Meg x 32 Reduced
Page Size Option1
4
BA0, BA1
A[13:0]
A[7:0]
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1 page  
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Features
Figure 51: Clock Suspend During READ Burst ................................................................................................. 83
Figure 52: Clock Suspend Mode ..................................................................................................................... 84
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
5 Page 
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Ball Assignments and Descriptions
Table 3: VFBGA Ball Descriptions
Symbol
CLK
CKE
CS#
CAS#, RAS#,
WE#
LDQM,
UDQM
(54-ball)
DQM[3:0]
(90-ball)
BA0, BA1
A[13:0]
DQ[31:0]
VDDQ
VSSQ
VDD
VSS
DNU
NC
Type Description
Input
Input
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive
edge of CLK. CLK also increments the internal burst counter and controls the output regis-
ters.
Clock enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. Deactivating the
clock provides precharge power-down and SELF REFRESH operation (all banks idle), active
power-down (row active in any bank), deep power-down (all banks idle), or CLOCK SUSPEND
operation (burst/access in progress). CKE is synchronous except after the device enters power-
down and self refresh modes, where CKE becomes asynchronous until after exiting the same
mode. The input buffers, including CLK, are disabled during power-down and self refresh
modes, providing low standby power.
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command de-
coder. All commands are masked when CS# is registered HIGH. CS# provides for external
bank selection on systems with multiple banks. CS# is considered part of the command code.
Input
Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being en-
tered.
Input
Input/Output mask: DQM is sampled HIGH and is an input mask signal for write accesses and
an output enable signal for read accesses. Input data is masked during a WRITE cycle. The
output buffers are High-Z (two-clock latency) during a READ cycle. For the x16, LDQM corre-
sponds to DQ[7:0] and UDQM corresponds to DQ[16:8]. For the x32, DQM0 corresponds to
DQ[7:0], DQM1 corresponds to DQ[15:8], DQM2 corresponds to DQ[23:16], and DQM3 corre-
sponds to DQ[31:24]. DQM[3:0] (or LDQM and UDQM if x16) are considered same state when
referenced as DQM.
Input
Bank address input(s): BA0 and BA1 define to which bank the ACTIVE, READ, WRITE, or PRE-
CHARGE command is being applied. BA0 and BA1 become “Don’t Care” when registering an
ALL BANK PRECHARGE (A10 HIGH).
Input
Address inputs: Addresses are sampled during the ACTIVE command (row) and READ/WRITE
command [column); column address A[9:0] (x16); with A10 defining auto precharge] to select
one location out of the memory array in the respective bank. A10 is sampled during a PRE-
CHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank selec-
ted by BA0, BA1. The address inputs also provide the op-code during a LOAD MODE REGIS-
TER command. The maximum address range is dependent upon configuration. Unused ad-
dress pins become RFU.1
I/O Data input/output: Data bus.
Supply DQ power: Provide isolated power to DQ for improved noise immunity.
Supply DQ ground: Provide isolated ground to DQ for improved noise immunity.
Supply Core power supply.
Supply Ground.
– Do not use: Must be grounded or left floating.
– Internally not connected. These balls can be left unconnected but it is recommended that
they be connected to VSS.
Note: 1. Balls marked RFU may or may not be connected internally. These balls should not be
used. Contact the factory for details.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
11 Page | ||
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| MT48H16M32LG | (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM | Micron Technology |
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