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PDF Si2319DS Data sheet ( Hoja de datos )
| Número de pieza | Si2319DS | |
| Descripción | P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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P-Channel 40-V (D-S) MOSFET
Si2319DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
−40
rDS(on) (W)
0.082 @ VGS = −10 V
0.130 @ VGS = −4.5 V
ID (A)b
−3.0
−2.4
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2319DS (C9)*
*Marking Code
Ordering Information: Si2319DS-T1
Si2319DS-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
−3.0
−2.4
−1.0
1.25
0.8
−40
"20
−12
−55 to 150
−2.3
−1.85
−0.62
0.75
0.48
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Maximum Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72315
S-40844—Rev. B, 03-May-04
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
www.vishay.com
1
1 page  
Si2319DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
166_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10 100
600
Document Number: 72315
S-40844—Rev. B, 03-May-04
www.vishay.com
5
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