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H5MS2562JFR-K3M fiches techniques PDF

Hynix Semiconductor - Mobile DDR SDRAM 256Mbit (16M x 16bit)

Numéro de référence H5MS2562JFR-K3M
Description Mobile DDR SDRAM 256Mbit (16M x 16bit)
Fabricant Hynix Semiconductor 
Logo Hynix Semiconductor 





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H5MS2562JFR-K3M fiche technique
256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O
Specification of
256Mb (16Mx16bit) Mobile DDR SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / July. 2009
1

PagesPages 62
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