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PDF IRF3305PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF3305PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 95758
AUTOMOTIVE MOSFET
Features
O Designed to support Linear Gate Drive
Applications
O 175°C Operating Temperature
O Low Thermal Resistance Junction - Case
O Rugged Process Technology and Design
O Fully Avalanche Rated
O Lead-Free
G
IRF3305PbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0mΩ
Description
Specifically designed for use in linear automotive
applications this HEXFET Power MOSFET utilizes
a rugged planar process technology and device
design, which greatly improves the Safe Operating
Area (SOA) of the device. These features, coupled
with 175°C junction operating temperature and
low thermal resistance of 0.45C/W make the
IRF3305 an ideal device for linear automotive
applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
www.irf.com
ID = 75A
S
TO-220AB
Max.
140
99
75
560
330
2.2
± 20
470
860
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
8/24/04
1 page  
IRF3305PbF
140
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.1758 0.00045
τ3τ3 0.228 0.004565
0.0457 0.01858
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF3305PBF.PDF ] | |
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