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Numéro de référence | MUR8100E | ||
Description | 700V - 1000V Ultrafast Diodes | ||
Fabricant | Harris | ||
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1 Page
SEMICONDUCTOR
MUR870E, MUR880E, MUR890E,
MUR8100E, RURP870, RURP880,
RURP890, RURP8100
April 1995
8A, 700V - 1000V Ultrafast Diodes
Features
• Ultrafast with Soft Recovery Characteristic
(tRR < 75ns)
• +175oC Rated Junction Temperature
• Reverse Voltage Up to 1000V
• Avalanche Energy Rated
Package
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Symbol
K
Description
MUR870E, MUR880E, MUR890E, MUR8100E and
RUR870, RUR880, RUR890, RUR8100 are ultrafast dual
diodes (tRR < 75ns) with soft recovery characteristics. They
have a low forward voltage drop and are of planar, silicon
nitride passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery char-
acteristics minimizes ringing and electrical noise in many
power switching circuits thus reducing power loss in the
switching transistor.
A
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
MUR870E
TO-220AC
MUR870
MUR880E
TO-220AC
MUR880
MUR890E
TO-220AC
MUR890
MUR8100E
TO-220AC
MUR8100
RURP870
TO-220AC
RURP870
RURP880
TO-220AC
RURP880
RURP890
TO-220AC
RURP890
RURP8100
TO-220AC
RURP8100
NOTE: When ordering, use entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
MUR870E
RURP870
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . IF(AV)
Total device forward current at rated
VR and TC = +150oC)
Peak Forward Repetitive Current . . . . . . . . . . . . . . . . . . IFRM
(Rated VR, square wave 20kHZ)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . .IFSM
(Surge applied at rated load condition
700V
700V
700V
8A
16A
100A
halfwave 1 phase 60Hz)
Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ -55oC to +175oC
MUR880E
RURP880
800V
800V
800V
8A
16A
100A
-55oC to +175oC
MUR890E
RURP890
900V
900V
900V
8A
16A
100A
-55oC to +175oC
MUR8100E
RURP8100
1000V
1000V
1000V
8A
16A
100A
-55oC to +175oC
Copyright © Harris Corporation 1995
5-12
File Number 2780.3
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Pages | Pages 3 | ||
Télécharger | [ MUR8100E ] |
No | Description détaillée | Fabricant |
MUR8100 | Ultra Fast Recovery Diodes | Sirectifier |
MUR8100 | SWITCHMODE Power Rectifiers | CumSumI |
MUR8100 | Diode Switching 1KV 8A 2-Pin(2+Tab) TO-220AC Rail | New Jersey Semiconductor |
MUR8100 | 8 Amp Ultra Fast Glass Passivated Rectifier | Frontier Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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