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PDF IHW40N60RF Data sheet ( Hoja de datos )
| Número de pieza | IHW40N60RF | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IHW40N60RF (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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IGBT
ReverseconductingIGBT
IHW40N60RF
InductiveHeatingSeries
Datasheet
IndustrialPowerControl
1 page  
IH-series
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=175°C
IC=0.58mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=40.0A
IHW40N60RF
min.
Value
typ.
max. Unit
600 -
-V
- 1.85 2.40 V
- 2.30 -
- 1.75 2.20 V
- 2.00 -
4.1 4.9 5.7 V
- - 40.0 µA
- - 3000.0
- - 100 nA
- 24.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=40.0A,
VGE=15V
VGE=15.0V,VCC≤400V
Value
Unit
min. typ. max.
- 2400 -
- 88 - pF
- 68 -
- 220.0 - nC
- 13.0 - nH
- -A
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
rG=5.6Ω,Lσ=90nH,
Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 175 - ns
- 14 - ns
- 0.56 - mJ
5 Rev.2.5,2014-03-12
5 Page 
IH-series
IHW40N60RF
16
120V
480V
14
12
10
1000
Cies
Coes
Cres
8
6 100
4
2
0
0 50 100 150 200
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=40A)
10
250 0
10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
D=0.5
D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
single pulse
0.01 0.01
0.001
1E-6
1E-5
i: 1 2 3
4
ri[K/W]: 0.0655 0.1301 0.1899
0.1045
τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796
1E-4 0.001 0.01 0.1
tp,PULSEWIDTH[s]
1
Figure 19. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-6
1E-5
i: 1 2 3
4
ri[K/W]: 0.0655 0.1301 0.1899
0.1045
τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796
1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11 Rev.2.5,2014-03-12
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IHW40N60RF.PDF ] | |
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