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PDF SMCJ5.0CA Data sheet ( Hoja de datos )
| Número de pieza | SMCJ5.0CA | |
| Descripción | Transil | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Features
■ Peak pulse power:
– 1500 W (10/1000 μs)
– 10 kW (8/20 μs)
■ Stand off voltage range: from 5 V to 188 V
■ Unidirectional and bidirectional types
■ Low leakage current:
– 0.2 μA at 25 °C
– 1 μA at 85 °C
■ Operating Tj max: 150 °C
■ High power capability at Tj max:
– 1250 W (10/1000 µs)
■ JEDEC registered package outline
Complies with the following standards
■ IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ IEC 61000-4-5
■ MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
■ Resin meets UL 94, V0
■ MIL-STD-750, method 2026 solderability
■ EIA STD RS-481 and IEC 60286-3 packing
■ IPC 7531 footprint
SMCJ
Transil™
A
K
Unidirectional
Bidirectional
SMC
(JEDEC DO-214AB)
Description
The SMCJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 1500 W (10/1000 μs).
The Planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMCJ are packaged in SMC (SMC footprint in
accordance with IPC 7531 standard).
July 2010
TM: Transil is a trademark of STMicroelectroniocs
Doc ID 5617 Rev 8
1/10
www.st.com
10
1 page  
SMCJ
Characteristics
Figure 6.
C(nF)
10.00
1.00
0.10
Junction capacitance versus
Figure 7.
reverse applied voltage for
unidirectional types (typical values)
SMCJ5.0A
SMCJ12A
SMCJ24A
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
C(nF)
10.00
1.00
SMCJ40A
SMCJ85A
SMCJ188A
0.10
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
SMCJ5.0CA
SMCJ12CA
SMCJ24CA
SMCJ40CA
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
SMCJ85CA
SMCJ188CA
0.01
1
VR(V)
10
100
1000
0.01
1
VR(V)
10 100
1000
Figure 8. Peak forward voltage drop
versus peak forward current
(typical values)
IFM(A)
1.0E+02
Figure 9. Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
1.00
Zth(j-a) / Rth(j-a)
Recommended pad layout
PCB FR4, copper thickness = 35 µm
1.0E+01
1.0E+00
Tj =125 °C
Tj =25 °C
0.10
VFM(V)
1.0E-01
0.01
tP(s)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 11. Leakage current versus junction
temperature (typical values)
Rth(j-a) (°C/W)
100
90
PCB FR4, copper thickness = 35 µm
IR (nA)
1.0E+04
80
1.0E+03
70 VR=VRM
60 VRM < 10 V
50 1.0E+02
40
30
20
10
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1.0E+01
1.0E+00
25
VR=VRM
VRM ≥ 10 V
50 75 100
Tj(°C)
125 150
Doc ID 5617 Rev 8
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SMCJ5.0CA.PDF ] | |
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