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PDF M470T2864FB3 Data sheet ( Hoja de datos )

Número de pieza M470T2864FB3
Descripción 200pin Unbuffered SODIMM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! M470T2864FB3 Hoja de datos, Descripción, Manual

Rev. 1.2, Oct. 2010
M470T6464FBS
M470T2863FB3
M470T2864FB3
M470T5663FB3
200pin Unbuffered SODIMM
based on 1Gb F-die
60FBGA/84FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2010 Samsung Electronics Co., Ltd. All rights reserved.
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1 page




M470T2864FB3 pdf
Unbuffered SODIMM
datasheet
Rev. 1.2
DDR2 SDRAM
4. Pin Configurations (Front side/Back side)
Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back
1 VREF 2
VSS
51 DQS2 52
DM2 101
A1
102
A0
3 VSS 4 DQ4 53 VSS 54 VSS 103 VDD 104 VDD
5
DQ0
6
DQ5
55 DQ18 56 DQ22 105 A10/AP 106 BA1
7 DQ1 8 VSS 57 DQ19 58 DQ23 107 BA0 108 RAS
9 VSS 10 DM0 59 VSS 60 VSS 109 WE 110 S0
11 DQS0 12 VSS 61 DQ24 62 DQ28 111 VDD 112 VDD
13 DQS0 14
DQ6
63 DQ25 64 DQ29 113 CAS 114 ODT0
15 VSS 16 DQ7 65 VSS 66 VSS 115 NC/S1 116 A13
17 DQ2 18 VSS 67 DM3 68 DQS3 117 VDD 118 VDD
19 DQ3 20 DQ12 69
NC
70 DQS3 119 NC/ODT1 120
NC
21 VSS 22 DQ13 71 VSS 72 VSS 121 VSS 122 VSS
23 DQ8 24 VSS 73 DQ26 74 DQ30 123 DQ32 124 DQ36
25 DQ9 26 DM1 75 DQ27 76 DQ31 125 DQ33 126 DQ37
27 VSS 28 VSS 77 VSS 78 VSS 127 VSS 128 VSS
29 DQS1 30 CK0 79 CKE0 80 NC/CKE1 129 DQS4 130 DM4
31 DQS1 32 CK0 81 VDD 82 VDD 131 DQS4 132 VSS
33 VSS 34 VSS 83 NC 84 NC 133 VSS 134 DQ38
35 DQ10 36 DQ14 85 BA2 86
NC 135 DQ34 136 DQ39
37 DQ11 38 DQ15 87 VDD 88 VDD 137 DQ35 138 VSS
39 VSS 40 VSS 89 A12 90 A11 139 VSS 140 DQ44
41 VSS 42 VSS 91 A9 92 A7 141 DQ40 142 DQ45
43 DQ16 44 DQ20 93
A8
94
A6
143 DQ41 144
VSS
45 DQ17 46 DQ21 95 VDD 96 VDD 145 VSS 146 DQS5
47 VSS 48 VSS 97 A5 98 A4 147 DM5 148 DQS5
49 DQS2 50 NC 99 A3 100 A2 149 VSS 150 VSS
NOTE :NC = No Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules.
Pin Front Pin
151 DQ42 152
153 DQ43 154
155 VSS 156
157 DQ48 158
159 DQ49 160
161 VSS 162
163 NC, TEST 164
165 VSS 166
167 DQS6 168
169 DQS6 170
171 VSS 172
173 DQ50 174
175 DQ51 176
177 VSS 178
179 DQ56 180
181 DQ57 182
183 VSS 184
185 DM7 186
187 VSS 188
189 DQ58 190
191 DQ59 192
193 VSS 194
195 SDA 196
197 SCL 198
199 VDDSPD 200
Back
DQ46
DQ47
VSS
DQ52
DQ53
VSS
CK1
CK1
VSS
DM6
VSS
DQ54
DQ55
VSS
DQ60
DQ61
VSS
DQS7
DQS7
VSS
DQ62
DQ63
VSS
SA0
SA1
5. Pin Description
Pin Name
CK0,CK1
CK0,CK1
CKE0,CKE1
RAS
CAS
WE
Description
Clock Inputs, positive line
Clock Inputs, negative line
Clock Enables
Row Address Strobe
Column Address Strobe
Write Enable
S0,S1
Chip Selects
A0~A9, A11~A13
A10/AP
BA0,BA1
ODT0,ODT1
SCL
CK0,CK1
Address Inputs
Address Input/Autoprecharge
SDRAM Bank Address
On-die termination control
Serial Presence Detect(SPD) Clock Input
Clock Inputs, positive line
NOTE : The VDD and VDDQ pins are tied to the single power-plane on PCB.
Pin Name
SDA
SA1,SA0
DQ0~DQ63
DM0~DM7
DQS0~DQS7
DQS0~DQS7
TEST
VDD
VSS
VREF
VDDSPD
NC
SDA
Description
SPD Data Input/Output
SPD address
Data Input/Output
Data Masks
Data strobes
Data strobes complement
Logic Analyzer specific test pin
(No connect on So-DIMM)
Core and I/O Power
Ground
Input/Output Reference
SPD Power
Spare pins, No connect
SPD Data Input/Output
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5 Page





M470T2864FB3 arduino
Unbuffered SODIMM
datasheet
Rev. 1.2
DDR2 SDRAM
8. Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
NOTE
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Voltage on VDD pin relative to VSS
Voltage on VDDQ pin relative to VSS
Voltage on VDDL pin relative to VSS
Voltage on any pin relative to VSS
Storage Temperature
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
V1
V1
V1
V1
°C 1, 2
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
9. AC & DC Operating Conditions
9.1 Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
VDD
VDDL
VDDQ
VREF
VTT
Parameter
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Min.
1.7
1.7
1.7
0.49*VDDQ
VREF-0.04
Rating
Typ.
1.8
1.8
1.8
0.50*VDDQ
VREF
Max.
1.9
1.9
1.9
0.51*VDDQ
VREF+0.04
Units
V
V
V
mV
V
NOTE
4
4
1,2
3
Symbol
VDDSPD
Parameter
Core Supply Voltage
Min.
1.7
Rating
Max.
3.6
Units
V
NOTE
5
NOTE : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting
device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
5. SODIMMs that include an optional temperature sensor may require a restricted VDDSPD operating voltage range for proper operation of the temperature sensor. Refer to the
thermal sensor specification for details regarding the supported voltage range. All other functions of the SODIMM SPD are supported across the full VDDSPD range.
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