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PDF S-L2N7002LT1G Data sheet ( Hoja de datos )
| Número de pieza | S-L2N7002LT1G | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
• We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
• ESD Protected:1000V
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
VDSS
VDGR
ID
ID
IDM
60
60
±115
±75
±800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
VGS
VGSM
±20 Vdc
±40 Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
RθJA
PD
556 °C/W
300 mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, Tstg
417
-55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
L2N7002LT1G
S-L2N7002LT1G
L2N7002LT3G
S-L2N7002LT3G
702
702
Shipping
3000 Tape & Reel
10000 Tape & Reel
L2N7002LT1G
S-L2N7002LT1G
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
Simplified Schematic
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
1
Gate
702
W
2
Source
= Device Code
=Month Code
Rev .O 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet S-L2N7002LT1G.PDF ] | |
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