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PDF K3473 Data sheet ( Hoja de datos )
| Número de pieza | K3473 | |
| Descripción | MOSFET ( Transistor ) - 2SK3473 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3473
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
9
27
150
413
9
15
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 9.35 mH, IAR = 9 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2003-07-16
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3473.PDF ] | |
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