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PDF STM4800S Data sheet ( Hoja de datos )
| Número de pieza | STM4800S | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STM4800S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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S TM4800S
S amHop Microelectronics C orp.
J un.07 2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m Ω ) Max
30V 8A
20 @ VGS = 10V
28 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Tj=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipationa
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
20
8
32
1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1
1 page  
S TM4800S
1500
1250
1000
750
C is s
500
6 C oss
250
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
600
100
60
Tr Tf
10
V DS =15V ,ID=1A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
10
VDS =10V
8 ID=8A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
50
30
10
R DS(ON) Limit
1
10ms
100ms
1s
DC
0.1 VGS =10V
S ingle P ulse
0.03 TA=25 C
0.1 1
10 30 50
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STM4800S.PDF ] | |
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